Title :
Extraction of the interfacial generation velocity in MOSFETs
Author :
Dugas, J. ; Jérisian, R. ; Oualid, J. ; Labrunye, D. ; Mirabel, J.M.
Author_Institution :
Lab. des Materiaux et Composants Semi-Cond., Domaine Univ. de Saint-Jerome, Marseille, France
Abstract :
A novel method based upon gate controlled diode static characteristics is proposed to determine the interfacial generation velocity So in MOSFETs. So is deduced from the measurement of the apparent generation velocity of two long transistors with different channel lengths. Results concerning natural or implanted transistors, with single or double diffused drains, are presented and discussed
Keywords :
carrier mobility; insulated gate field effect transistors; ion implantation; MOSFETs; apparent generation velocity; channel lengths; double diffused drains; gate controlled diode static characteristics; implanted transistors; interfacial generation velocity; long transistors; single diffused drains; Character generation; Current measurement; Diodes; Interface states; Leakage current; Length measurement; MOSFETs; Performance evaluation; Velocity control; Velocity measurement;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161705
