Study of redox reactions in resistive switching processes of AlOx/WOy based bilayer RRAM

Author

Minghao Wu ; Huaqiang Wu ; Xinyi Li ; Ning Deng ; He Qian

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

fYear

2014

fDate

28-30 April 2014

Firstpage

1

Lastpage

2

Abstract

Pulsed programming measurements were carried out to study the abrupt differences between the SET/RESET processes of the AlO_x/WO_y bilayer RRAM devices. Electrical measurement results showed that both SET and RESET switching are affected by the applied pulse amplitude. But the RESET operation has a strong relation with the pulse width. Calculation results indicate the RESET step needs more energy than the SET step. A combination of electrical field and joule heating is needed to complete the RESET step. A redox reaction model is proposed to explain the asymmetry characteristic of the SET/RESET operations.

Keywords

aluminium compounds; oxidation; random-access storage; reduction (chemical); tungsten compounds; AlO_x-WO_y; Joule heating; applied pulse amplitude; asymmetry characteristic; bilayer RRAM devices; electrical field; electrical measurement; pulsed programming measurements; redox reaction model; resistive switching processes; set-reset processes; Current measurement; Electrical resistance measurement; Fabrication; Ions; Resistance; Switches; Voltage measurement; RRAM; Redox reaction; Switching mechanism;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on

Conference_Location

Hsinchu

Type

conf

DOI

10.1109/VLSI-TSA.2014.6839690

Filename

6839690