Title :
Structural-phase ordering in Ta2O5-p-Si heterosystem enhanced by microwave processing
Author :
Atanassova, E. ; Boltovets, N.S. ; Kolyadina, E.Yu. ; Konakova, R.V. ; Koprinarova, J. ; Matveeva, L.A. ; Milenin, V.V. ; Mitin, V.F. ; Shynkarenko, V.V. ; Voitsikhovskyi, D.I.
Author_Institution :
Inst. of Solid State Phys., Bulgarian Acad. of Sci., Sofia, Bulgaria
fDate :
6/24/1905 12:00:00 AM
Abstract :
We present the results of comprehensive investigations of the effects of ordering enhanced by magnetron microwave radiation (frequency of 2.45 GHz, irradiance of 1.5 W/cm2, and processing duration of 10 s) in Ta2O5-p-Si heterosystem and MIS structures with Ta2O5 insulator 16-24 nm thick. It was shown that using microwave treatment of investigated samples we can receive practically relaxed heterosystems whose parameters correlate with characteristics of MIS structures. In this case the Ta2O 5/p-Si interface becomes essentially ordered
Keywords :
Brillouin zones; MIS structures; electroreflectance; interface structure; internal stresses; microwave heating; semiconductor-insulator boundaries; silicon; stress relaxation; tantalum compounds; 2.45 GHz; Brillouin zone; I-V curves; MIS structures; Ta2O5-Si; collision line-broadening parameter; compressive stresses; electrophysical parameters; electroreflectance spectra; intrinsic stresses; magnetron microwave radiation processing; p-type substrates; relaxed heterosystem; strain relaxation; structural-phase ordering; tensile stresses; threshold energy; Degradation; Electromagnetic radiation; Frequency; Gallium arsenide; Insulation; Metal-insulator structures; Microwave devices; Semiconductor devices; Silicon; Stress;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003313
