Title :
Reactive ion etching of 4H-SiC in C2F6-O2 and C2F6-Ar mixtures
Author :
Stevens, Eduardo Pereira ; Mawby, Phil ; Pritchard, Mark ; Kampouris, C.
Author_Institution :
Dept. of Electron. & Electri. Eng., Univ. of Wales, Swansea, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
In this paper we present an investigation on the etch rate of 4H-SiC using conventional reactive ion etching (RIE) equipment in a C 2F6 plasma with the addition of O2 and Ar. It was found that the highest etch rate is obtained when a gas mixture with 40% of O2 is used. With a total flow rate of 80 sccm, 40 mTorr pressure and 350 W of power it produced a high etch rate of 1250 Å/min and gave a highly anisotropic profile
Keywords :
silicon compounds; sputter etching; wide band gap semiconductors; 350 W; 40 mtorr; 4H-SiC; SiC; anisotropic profile; etch rate; gas mixture; plasma-based etching; reactive ion etching; total flow rate; Argon; Etching; Feeds; Oxygen; Plasma applications; Plasma properties; Plasma sheaths; Power engineering and energy; Silicon carbide; Tellurium;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003315
