Title :
Reliability, yield, and performance of a 90 nm SOI/Cu/SiCOH technology
Author :
Edelstein, D. ; Davis, Chris ; Clevenger, L. ; Yoon, M. ; Cowley, A. ; Nogami, T. ; Rathore, H. ; Agarwala, B. ; Arai, S. ; Carbone, A. ; Chanda, K. ; Cohen, S. ; Cote, W. ; Cullinan, Michael ; Dalton, T. ; Das, S. ; Davis, Peter ; Demarest, J. ; Dunn, D.
Author_Institution :
IBM Microelectron., White Plains, NY, USA
Abstract :
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k. Results are presented on every aspect of BEOL and chip-package reliability, yields, low-k film parameters, BEOL capacitances and circuit delays on functional chips. All results meet or exceed our concurrent 90 nm Cu/FTEOS technology, and support extendibility to 65 nm.
Keywords :
CMOS integrated circuits; copper; integrated circuit interconnections; integrated circuit packaging; integrated circuit reliability; integrated circuit yield; silicon compounds; silicon-on-insulator; 90 nm; BEOL capacitances; CMOS technology; Cu; Cu/SiCOH technology; FTEOS technology; SOI; SiCOH; chip-package reliability; circuit delays; functional chips; integration engineering; low-k film parameters; low-k interconnect BEOL; material engineering; performance evaluation; Artificial intelligence; CMOS technology; Capacitance; Integrated circuit interconnections; Integrated circuit reliability; Manufacturing; Materials reliability; Reliability engineering; Switches; Wiring;
Conference_Titel :
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN :
0-7803-8308-7
DOI :
10.1109/IITC.2004.1345750
