Title :
Integration issues for polymeric dielectrics in large area electronics [TFTs]
Author :
Jeyakumar, R. ; Karim, K.S. ; Sivoththaman, S. ; Nathan, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
6/24/1905 12:00:00 AM
Abstract :
The issues concerning the integration of polymeric low-permittivity (low-k) dielectrics in amorphous Si (a-Si) thin-film transistor (TFT) arrays have been investigated. A photosensitive spin-on polymer, photo-benzocyclobutene (PBCB), has been studied for integration as interlevel dielectric between the transistor and pixel levels in TFT arrays. The dielectric films were characterized by permittivity, stress, and planarization measurements. The dielectric constant was found to be in the range of 2.5-3.5. The degree of planarization was > 90%, and the film stress was about 60 MPa. Process parameters have been optimized for integration in TFT arrays. Measurements on test structures showed low leakage current and good electrical contact at via interconnections
Keywords :
amorphous semiconductors; dielectric thin films; elemental semiconductors; leakage currents; permittivity; polymer films; silicon; thin film transistors; PBCB; a-Si; degree of planarization; dielectric constant; electrical contact; film stress; interlevel dielectric; large area electronics; leakage current; low-permittivity dielectrics; permittivity; photo-benzocyclobutene; photosensitive spin-on polymer; pixel levels; planarization measurements; polymeric dielectrics; process parameters; test structures; thin-film transistor arrays; via interconnections; Amorphous materials; Current measurement; Dielectric constant; Dielectric films; Dielectric measurements; Permittivity measurement; Planarization; Polymers; Stress measurement; Thin film transistors;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003316
