DocumentCode
161734
Title
New advances on heterogeneous integration of III-V on silicon
Author
Guang-Hua Duan ; Accard, A. ; Kaspar, P. ; Jany, C. ; Le Liepvre, A. ; Make, Dalila ; Levaufre, G. ; Girard, N. ; Shen, A. ; Decobert, Jean ; Legay, Nadine ; Lelarge, F. ; Mallecot, F. ; Charbonnier, Pierre ; Gariah, H. ; Gentner, J.-L. ; Olivier, S. ; Ma
Author_Institution
III-V Lab., Alcatel-Thales, Palaiseau, France
fYear
2014
fDate
21-25 Sept. 2014
Firstpage
1
Lastpage
3
Abstract
Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using a wafer bonding technique are reported. In particular, III-V/Si lasers exhibiting C-band tuning range and high side-mode suppression ratio as well as high-gain semiconductor optical amplifiers are demonstrated.
Keywords
III-V semiconductors; elemental semiconductors; laser tuning; semiconductor optical amplifiers; silicon; wafer bonding; C-band tuning range; Si; heterogeneous integration; high side-mode suppression ratio; hybrid III-V/Si lasers; semiconductor optical amplifiers; wafer bonding; Laser modes; Optical waveguides; Ring lasers; Semiconductor optical amplifiers; Silicon; Tuning; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communication (ECOC), 2014 European Conference on
Conference_Location
Cannes
Type
conf
DOI
10.1109/ECOC.2014.6964234
Filename
6964234
Link To Document