The application of simultaneous ebeam cure methods for 65 nm node Cu/low-k technology with hybrid (PAE/MSX) structure

High performance low-k hybrid-DD structure (poly-arylene-ether (PAE)/ poly-methylsiloxane (MSX)) is realized by simultaneous electron beam (ebeam) curing technique, and applied to a 65 nm node Cu/low-k multilevel damascene process. By eBeam curing for MSX, while maintaining a k value, both mechanical strength and adhesion strength of the bottom interface have been improved. In addition, since the introduction of the ebeam cure technique reduces cure temperature and time of spin on dielectric formation, the thermal budget is dramatically reduced. The simultaneous ebeam curing of PAE/MSX hybrid structure realizes low-cost and high reliability Cu/low-k interconnects. It is also considered that this ebeam cure technology will be very effective in 65 nm node devices and beyond.