Novel molecular-structure design for PECVD porous SiOCH films toward 45nm node, ASICs with k=2.3

Author

Hayashi, Y. ; Itoh, E. ; Harada, Y. ; Takeuchi, T. ; Tada, M. ; Tagami, M. ; Ohtake, H. ; Hijioka, K. ; Saito, S. ; Onodera, T. ; Hara, D. ; Tokudome, K.

Author_Institution

Syst. Devices Res. Lab., NEC Corp., Kanagawa, Japan

fYear

2004

Firstpage

225

Lastpage

227

Abstract

A porous SiOCH film with k=2.3 is developed by a new concept PECVD, in which pore-involved molecules are piled up together to deposit a "molecular-pore stacked, SiOCH (MPS)" film. The pore size and the density of the film are controlled by designing the pore size and the steric-hindrance side-chains of the source molecules. A newly synthesized, 6-member ring-type, organo-siloxane with the side-chains of large steric-hindrance hydrocarbons realizes the MPS film with k=2.3. the basic feasibility of the MPS film is confirmed through the integration into Cu damascene interconnects. The MPS film is a strong candidate for the low-k, inter-metal-dielectrics in 45nm node, ASICs.

Keywords

application specific integrated circuits; copper; dielectric thin films; integrated circuit interconnections; plasma CVD; polymer films; porous materials; silicon compounds; 45 nm; ASIC; Cu; MPS film; PECVD; SiOCH; damascene interconnects; film density; intermetal-dielectrics; molecular-pore stacked; molecular-structure design; organo-siloxane; pore size; pore-involved molecules; porous SiOCH films; source molecules; steric-hindrance hydrocarbons; steric-hindrance side-chains; Application specific integrated circuits; Energy consumption; Gas detectors; Hydrocarbons; Laboratories; National electric code; Plasma accelerators; Polymer films; Semiconductor films; Size control;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International

Print_ISBN

0-7803-8308-7

Type

conf

DOI

10.1109/IITC.2004.1345755

Filename

1345755