DocumentCode
161749
Title
Foundry RF technologies
Author
Verma, P.R. ; Zhang Shaoqiang ; Chew Kok Wai ; Tan Juan Boon ; Nair, R.
Author_Institution
GLOBALFOUNDRIES Pvt Ltd., Singapore, Singapore
fYear
2014
fDate
28-30 April 2014
Firstpage
1
Lastpage
2
Abstract
Landscape of semiconductor technologies and manufacturing has been changing in general and RF technologies in specific from IDMs to foundries and from exotic III-V compounds to the silicon. Tremendous advantage of RF performance from nanometer technologies, exponential increase in scalability, availability of high resistivity and engineered SOI substrates have opened doors for the convergence of all sorts of RF applications to silicon based RF technologies. Wafer foundries having been in the leading position of silicon based technologies are going to be benefited with this convergence and all design houses will have access to the same with minimal investments. This paper talks about the three major forces which are helping to converge all consumer RF application integrated circuits to total silicon based solutions with minimum form factor.
Keywords
elemental semiconductors; foundries; integrated circuit design; integrated circuit packaging; radiofrequency integrated circuits; silicon; silicon-on-insulator; 2.5D-3D packaging; IDMs; RF application integrated circuits; Si; engineered SOI substrates; exotic III-V compounds; foundry RF technology; minimum form factor; nanometer technology; semiconductor technology; silicon based RF technology; wafer foundries; Foundries; Logic gates; Metals; Performance evaluation; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, Systems and Application (VLSI-TSA), Proceedings of Technical Program - 2014 International Symposium on
Conference_Location
Hsinchu
Type
conf
DOI
10.1109/VLSI-TSA.2014.6839703
Filename
6839703
Link To Document