Title :
Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification
Author :
Hossain, M. Shamim ; Khan, Saeed Uz Zaman ; Hossen, Md Obaidul ; Rahman, Fahim Ur ; Zaman, Rifat ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
The 3-D poisson´s equation with eight boundary conditions is solved analytically and an analytical model of potential profile and threshold voltage for rectangular gate-all-around III-V nanowire MOSFET device is developed with quantum correction. Dependence of threshold voltage on channel width, oxide thickness, gate-length, doping and channel material composition are determined from the developed model with experimental and ATLAS verification.. The model agrees well with experimental and simulation results and offers an insight to the device performance.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; doping profiles; nanowires; semiconductor device models; semiconductor quantum wires; 3D Poisson equation; ATLAS verification; analytical modeling; boundary conditions; channel material composition; channel width; doping determination; gate-length; oxide thickness; potential profile modeling; quantum correction; rectangular gate-all-around III-V nanowire MOSFET device; threshold voltage dependence; threshold voltage modeling; Analytical models; Doping; Electric potential; Logic gates; MOSFET; Semiconductor process modeling; Threshold voltage; III–V GAA MOSFET; Nanowire; Poisson´s equation; Potential Profile; Quantum correction; Threshold Voltage;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482770
