Analytical modeling of potential profile and threshold voltage for rectangular gate-all-around III–V nanowire MOSFETs with ATLAS verification

Author

Hossain, M. Shamim ; Khan, Saeed Uz Zaman ; Hossen, Md Obaidul ; Rahman, Fahim Ur ; Zaman, Rifat ; Khosru, Quazi D. M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

Firstpage

1

Lastpage

3

Abstract

The 3-D poisson´s equation with eight boundary conditions is solved analytically and an analytical model of potential profile and threshold voltage for rectangular gate-all-around III-V nanowire MOSFET device is developed with quantum correction. Dependence of threshold voltage on channel width, oxide thickness, gate-length, doping and channel material composition are determined from the developed model with experimental and ATLAS verification.. The model agrees well with experimental and simulation results and offers an insight to the device performance.

Keywords

III-V semiconductors; MOSFET; Poisson equation; doping profiles; nanowires; semiconductor device models; semiconductor quantum wires; 3D Poisson equation; ATLAS verification; analytical modeling; boundary conditions; channel material composition; channel width; doping determination; gate-length; oxide thickness; potential profile modeling; quantum correction; rectangular gate-all-around III-V nanowire MOSFET device; threshold voltage dependence; threshold voltage modeling; Analytical models; Doping; Electric potential; Logic gates; MOSFET; Semiconductor process modeling; Threshold voltage; III–V GAA MOSFET; Nanowire; Poisson´s equation; Potential Profile; Quantum correction; Threshold Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482770

Filename

6482770