DocumentCode
1617530
Title
Accelerated crack growth of nanoporous low-k glasses in CMP slurry environments
Author
Guyer, Eric P. ; Dauskardt, Reinhold H.
Author_Institution
Dept. of Mater. Sci. & Eng., Standford Univ., CA, USA
fYear
2004
Firstpage
236
Lastpage
238
Abstract
Considerable efforts have been directed at integrating nanoporous low dielectric constant (LKD) materials into the interconnect structures of high-density integrated circuits. The reliable fabrication of devices containing these fragile materials is, however, a significant technological challenge due to their high propensity for mechanical failure during all levels of processing and subsequent packaging operations in which they are subjected to mechanical loads in the presence of aggressive aqueous environments, such as chemical mechanical planarization (CMP). Here we demonstrate the significant effect of CMP solution chemistry on interfacial adhesion and crack growth rates in nanoporous LKD thin-films as well as lithographically patterned structures containing copper and LKDs. A new mechanism of accelerated cracking in H2O2 environments is revealed.
Keywords
chemical mechanical polishing; cracks; dielectric materials; glass; nanoporous materials; CMP slurry environments; CMP solution chemistry; H2O2; aqueous environments; chemical mechanical planarization; copper; crack growth rates; devices fabrication; fragile materials; integrated circuits; interconnect structures; interfacial adhesion; lithographically patterned structures; low dielectric constant; mechanical failure; mechanical loads; nanoporous LKD thin-films; nanoporous low-k glasses; nanoporous materials; packaging operations; Acceleration; Dielectric constant; Dielectric materials; Fabrication; Glass; Integrated circuit interconnections; Integrated circuit reliability; Materials reliability; Nanoporous materials; Slurries;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2004. Proceedings of the IEEE 2004 International
Print_ISBN
0-7803-8308-7
Type
conf
DOI
10.1109/IITC.2004.1345760
Filename
1345760
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