Title :
Analytical 2D model for the channel electric field in undoped Schottky barrier Double-Gate MOSFET
Author :
Schwarz, Mike ; Kloes, Alexander ; Iníguez, Benjamín
Author_Institution :
Univ. of Appl. Sci. Giessen-Friedberg, Giessen, Germany
Abstract :
A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson´s equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation results.
Keywords :
MOSFET; Poisson equation; Schottky barriers; Schottky gate field effect transistors; semiconductor device models; 2D Poisson equation; 2D TCAD Sentaurus simulator; analytical 2D model; channel electric field; subthreshold region; undoped Schottky barrier double-gate MOSFET; Boundary conditions; Electric potential; Electrodes; Geometry; Integrated circuit modeling; MOSFET circuits; Mathematical model; 2D Poisson; Double-Gate (DG) MOSFET; Schottky barrier; analytical closed-form; compact modeling; conformal mapping; device modeling; electric field;
Conference_Titel :
Mixed Design of Integrated Circuits and Systems (MIXDES), 2010 Proceedings of the 17th International Conference
Conference_Location :
Warsaw
Print_ISBN :
978-1-4244-7011-2
Electronic_ISBN :
978-83-928756-4-2
