Title :
Effect of thickness and annealing on crystallization of MgO in magnetic tunnel junction structure
Author :
Yong-Le Lou ; Yu-Ming Zhang ; Hui Guo ; Yi-Men Zhang ; Yu-Chen Li ; Da-Qing Xu
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xian, China
Abstract :
The growth and crystallization processes of Co20Fe50B30/MgO/Co20Fe50B30 magnetic tunnel junction structures are investigated with 2θ x-ray diffraction. By increasing thickness and proper annealing, the crystal structure of MgO has been improved. The results show important information for preparation of magnetic tunnel junction.
Keywords :
annealing; boron alloys; cobalt alloys; crystal structure; crystallisation; interface magnetism; interface structure; iron alloys; magnesium compounds; magnetic tunnelling; sputter deposition; 2θ X-ray diffraction; Co20Fe50B30-MgO-Co20Fe50B30; annealing; crystal structure; crystallization; magnetic tunnel junction structure; thickness effect; Annealing; Crystallization; Educational institutions; Magnetic tunneling; Sputtering; X-ray diffraction; X-ray scattering; MTJ; MgO; annealing; crystallization;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482781
