The vertical test structure for measuring contact resistance between two kinds of metal

Author

Ido, Sachio ; Imai, Masahiko ; Kumise, Takaaki ; Satoh, Masami ; Horir, H. ; Ando, Satoshi

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1990

Firstpage

29

Lastpage

34

Abstract

A vertical test structure was developed for measuring the contact resistance between two kinds of metal. The contact resistance between Al/TiN/AlSi and heavily As⁺-doped n⁺-poly Si was measured using this structure. The test structure was found to suppress nonuniform current density in the contact hole and to provide more accurate contact resistances. In addition, the R_c of a small contact window could be obtained from the extrapolation of the measurement data found for large contact windows

Keywords

aluminium; aluminium alloys; arsenic; carrier density; contact resistance; electric resistance measurement; elemental semiconductors; semiconductor-metal boundaries; silicon alloys; titanium compounds; Al-TiN-AlSi-Si:As⁺; contact hole; contact resistance; nonuniform current density; small contact window; vertical test structure; Conductivity; Contact resistance; Current density; Current measurement; Density measurement; Electrical resistance measurement; Electrodes; Impurities; Testing; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-87942-588-1

Type

conf

DOI

10.1109/ICMTS.1990.161708

Filename

161708