Comprehensive investigation of linear cross talk in 4×4 semiconductor optical amplifier gate switch matrix

Author

Larsen, Claus Popp ; Gustavsson, Mats

Author_Institution

Fiber Opt. Res. Center, Ericsson Components AB, Stockholm, Sweden

fYear

1997

Firstpage

6

Lastpage

7

Abstract

We present for the first time to our knowledge a comprehensive investigation of linear optical cross talk in an integrated switch-a packaged 4 X 4 semiconductor optical amplifier (SOA) gate switch matrix in InGaAsP-InP and show that the cross talk is a combination of interferometric and noninterferometric effects occuring on the chip

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; gallium compounds; indium compounds; light interferometry; optical communication equipment; optical crosstalk; semiconductor device packaging; semiconductor lasers; wavelength division multiplexing; 4×4 semiconductor optical amplifier gate switch matrix; InGaAsP-InP; chip; cross talk; integrated switch; interferometric effects; linear cross talk; noninterferometric effects; packaged 4 X 4 semiconductor optical amplifier gate switch matrix; Integrated optics; Intelligent networks; Optical fibers; Optical interferometry; Optical switches; Optical transmitters; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Fiber Communication. OFC 97., Conference on

Conference_Location

Dallas, TX

Print_ISBN

1-55752-480-7

Type

conf

DOI

10.1109/OFC.1997.719639

Filename

719639