A low noise CMOS operational amplifier in a 1.2 μm digital technology

Author

Holman, W.T. ; Connelly, J.A. ; Perez, J.O. ; Motchenbacher, C.D.

Author_Institution

Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

fYear

1992

Firstpage

1120

Abstract

A low noise CMOS operational amplifier has been fabricated in a standard 1.2-μm digital technology. The op amp has a 3.0-mm² area. The layout and fabrication are described. The design requirements of the op amp included low power consumption, low input offset voltage, a gain-bandwidth product of at least 250 kHz, a 1/f noise corner of 100 Hz or lower, a midband equivalent input noise voltage of 10 nV/√Hz or less, and operation at ±2.5 V. The primary design requirement of the low frequency amplifier (LFA) was the minimization of the equivalent input noise of the op amp, especially the 1/f noise at frequencies between 100 Hz and 10 kHz. One useful means of evaluating the performance of the LFA is to compare the op amp´s characteristics to the typical parameters of the Texas Instruments TLC2201. This comparison indicates that the LFA´s performance is approximately equal to that of the TLC2201 in most respects

Keywords

CMOS integrated circuits; linear integrated circuits; operational amplifiers; random noise; semiconductor device noise; -2.5 V; 1.2 micron; 1/f noise; 100 Hz to 10 kHz; 2.5 V; CMOS operational amplifier; LNA; fabrication; layout; low frequency amplifier; low noise; low power consumption; n-well technology; op amp; standard 1.2-μm digital technology; 1f noise; CMOS technology; Circuit noise; Frequency; Integrated circuit noise; Low-frequency noise; Low-noise amplifiers; Operational amplifiers; Transconductance; White noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on

Conference_Location

Washington, DC

Print_ISBN

0-7803-0510-8

Type

conf

DOI

10.1109/MWSCAS.1992.271174

Filename

271174