Title :
A 1.05V 1.6mW 0.45°C 3σ-resolution ΔΣ-based temperature sensor with parasitic-resistance compensation in 32nm CMOS
Author :
Li, Y. William ; Lakdawala, Hasnain ; Raychowdhury, Arijit ; Taylor, Greg ; Soumyanath, K.
Author_Institution :
Intel, Hillsboro, OR
Abstract :
In the multicore era, thermal/power management is essential in order to meet platform-performance and energy-efficiency requirements.The paper here describe about a temperature sensor for remote temperature sensing that achieves the required resolution and variation tolerances by: 1) chopping the input current to the remote BJT pair; 2) deriving a voltage reference from the same BJTs; 3) making multiple current ratio measurements to eliminate parasitic resistance; and 4) using digital demodulation to eliminate analog offsets.
Keywords :
CMOS integrated circuits; bipolar transistors; delta-sigma modulation; temperature measurement; temperature sensors; BJT; CMOS; DeltaSigma-based temperature sensor; digital demodulation; input current chopping; multiple current ratio measurement; parasitic-resistance compensation; power 1.6 mW; reference voltage; remote temperature sensing; size 32 nm; temperature 0.45 degC; tolerance variation; voltage 1.05 V; Current measurement; Electrical resistance measurement; Energy efficiency; Energy management; Energy resolution; Multicore processing; Temperature sensors; Thermal management; Thermal resistance; Voltage;
Conference_Titel :
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-3458-9
DOI :
10.1109/ISSCC.2009.4977447
