Green´s function based 2-D MOSFET modeling for random dopant fluctuation

Author

Yong Hyeon Shin ; Jung Han Kang ; Yun, Ilgu

Author_Institution

Dept. of Electr. Electron. Eng., Yonsei Univ., Seoul, South Korea

fYear

2012

Firstpage

1

Lastpage

3

Abstract

Random dopant fluctuation (RDF) in MOSFET has been an issue recently due to the scaling down of CMOS process. Impedance field method has mainly used as a solution to predict effects of RDF previously. In addition, a new model, which converts a Poisson´s equation into a Green´s function based form, estimates inhomogeneous term of differential equation through charge distribution. In this paper, a Green´s function based 2-D MOSFET model is proposed. The model starts from the Poisson´s equation to obtain the initial conditions and then sum of Green´s function based formula and Laplace equation provide voltage distribution, charge distribution, and drive current as the modeling results. We also verify its effectiveness through the comparison with TCAD simulation results.

Keywords

Green´s function methods; Laplace equations; MOSFET; Poisson equation; random processes; semiconductor device models; technology CAD (electronics); voltage distribution; 2D MOSFET modeling; CMOS process; Green´s function; Laplace equation; Poisson equation; RDF effect prediction; TCAD simulation; charge distribution; differential equation; drive current; impedance field method; random dopant fluctuation; voltage distribution; Equations; Fluctuations; MOSFET; Mathematical model; Resource description framework; Semiconductor device modeling; Semiconductor process modeling; Green´s function; Poisson´s equation; Random dopant fluctuation (RDF); nano-scale MOSFET Modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482794

Filename

6482794