Title :
16-channel monolithically integrated InP-based p-i-n/HBT photoreceiver array with 11-GHz channel bandwidth and low cross talk
Author :
Syao, K.C. ; Yang, K. ; Aitken, A. L Gutierrez ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
High-performance multichannel detection systems are required for wavelength-division multiplexed (WDM) communication systems. In the present work, we report a 16-channel InAlAs-InGaAs optoelectronic integrated circuits (OEIC) photoreceiver array with an average channel bandwidth of 11 GHz. To our knowledge, the fabricated array is the largest in size and exhibits the highest bandwidth per channel and lowest cross talk for any monolithic photoreceiver array for WDM applications
Keywords :
III-V semiconductors; arrays; bipolar integrated circuits; indium compounds; integrated optoelectronics; optical crosstalk; optical receivers; p-i-n photodiodes; sensitivity; wavelength division multiplexing; 11 GHz; 16-channel; 16-channel InAlAs-InGaAs optoelectronic integrated circuits; InAlAs-InGaAs; InP-based p-i-n/HBT photoreceiver array; OEIC photoreceiver array; WDM applications; WDM communication systems; average channel bandwidth; channel bandwidth; fabricated array; low cross talk; monolithic photoreceiver array; monolithically integrated; multichannel detection systems; wavelength-division multiplexed; Bandwidth; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit measurements; Optical arrays; Optical feedback; Optical receivers; Optical sensors; PIN photodiodes;
Conference_Titel :
Optical Fiber Communication. OFC 97., Conference on
Conference_Location :
Dallas, TX
Print_ISBN :
1-55752-480-7
DOI :
10.1109/OFC.1997.719647
