CVD diamonds for microelectronics and electronics of high powers

Author

Parshin, V. ; Garin, B.M. ; Derkach, V.N. ; Heidinger, R. ; Konov, V.I. ; Lyapin, L.V. ; Molla, J. ; Ralchenko, V.G.

Author_Institution

Inst. of Appl. Phys., Acad. of Sci., Nizhny Novgorod, Russia

Volume

1

fYear

2004

Firstpage

60

Abstract

Properties of polycrystalline diamond wafers produced by chemical vapor deposition (CVD), important for microwave electronics are described. Diamond has a unique set of dielectric, thermal, chemical and mechanical properties, which are of primary interest for application in microwave electronics. The main ideas of CVD-technology are also presented. The dielectric properties in extremely broad frequency and the temperature range is (1 kHz-210 GHz, 70-800 K). The record breaking low values of dielectric loss tangent are observed (tanδ∼3·10^-6 at T=300 K, f=170 GHz). However, they are about one order of magnitude higher than the theoretical lower loss limit for diamond. The data are compared with theory. The combinations of data on dielectric losses in broad frequency and temperature ranges give most information on the loss mechanisms. CVD diamond is considered currently as the most promising material for the windows of megawatt gyrotrons for microwave heating in fusion reactors.

Keywords

Raman spectra; diamond; dielectric losses; dielectric materials; elastic moduli; plasma CVD coatings; power integrated circuits; thermal conductivity; thermal expansion; 1 kHz to 210 GHz; 70 to 800 K; C; CVD diamonds; CVD technology; chemical properties; chemical vapor deposition; dielectric loss tangent; dielectric losses; dielectric properties; fusion reactors; high power electronics; loss mechanisms; lower loss limit; mechanical properties; megawatt gyrotrons windows; microelectronics; microwave electronics; microwave heating; polycrystalline diamond wafer properties; thermal properties; Chemical vapor deposition; Dielectric losses; Dielectric materials; Electromagnetic heating; Frequency; Fusion reactors; Gyrotrons; Mechanical factors; Microelectronics; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves, 2004. MSMW 04. The Fifth International Kharkov Symposium on

Print_ISBN

0-7803-8411-3

Type

conf

DOI

10.1109/MSMW.2004.1345788

Filename

1345788