Title :
HfON/LaON as charge-trapping layer for nonvolatile memory applications
Author :
Huang, X.D. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
The charge-trapping characteristics of HfON/LaON composite film (denoted as HfLaON) were investigated based on an Al/Al2O3/HfLaON/SiO2/Si (MONOS) capacitor. The physical properties of the high-k film were analyzed by transmission electron microscopy and electron diffraction spectroscopy. Compared with another MONOS capacitor with nitrided La2O3 as charge-trapping layer, the one with HfLaON showed better memory characteristics in terms of larger memory window, higher program speed (6.3 V at +14 V for 100 μs), and smaller charge loss (8.2% after 104 sec), due to the HfLaON composite film exhibiting an amorphous structure and the suppressed formation of an interlayer at the HfLaON/SiO2 interface.
Keywords :
electron spectroscopy; flash memories; hafnium compounds; high-k dielectric thin films; lanthanum compounds; transmission electron microscopy; HfON-LaON; MONOS capacitor; amorphous structure; charge loss; charge-trapping layer; composite film; electron diffraction spectroscopy; high-k film; memory characteristics; memory window; nonvolatile memory application; physical properties; program speed; transmission electron microscopy; Capacitors; Electron traps; Films; Hafnium compounds; Logic gates; MONOS devices; Nonvolatile memory; HfLaON; charge-trapping; nonvolatile memory;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482795
