Title :
Modeling hot-carrier-induced reliability of poly-silicon thin film transistors
Author :
Wang, Lisa Ling ; Kuo, J.B. ; Shengdong Zhang
Author_Institution :
Sch. of Comput. & Inf. Eng., Peking Univ., Shenzhen, China
Abstract :
This paper reports modeling the hot-carrier-induced reliability of poly-silicon thin film transistors (poly-Si TFT). In the damage region near the drain of the poly-Si TFT, using the tail-state-density-dependent mobility model as for the amorphous silicon TFT model, the tail state density model of the test device after stress, as a function of the stress time has been built; which is the key in modeling the reliability of poly-Si TFT biased at high VD and a low VG, as verified by experimental data.
Keywords :
amorphous semiconductors; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device reliability; silicon; thin film transistors; Si; amorphous silicon TFT model; hot-carrier-induced reliability modelling; poly-silicon thin film transistors; tail-state-density-dependent mobility model; test device; Amorphous silicon; Data models; Electric fields; Hot carriers; Reliability; Stress; Thin film transistors; Poly-Si TFTs; hot carriers; reliability; tail state;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482798
