Title :
Resistive switching behavior of ZrO2 thin film fabricated on PES flexible substrate
Author :
Chun-Chieh Lin ; Huei-Bo Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Shoufeng, Taiwan
Abstract :
ZrO2 resistive switching memory has been widely studied due to its possible application in next-generation nonvolatile memory. In this study, the ZrO2 memory device is fabricated on a flexible substrate for the first time. The proposed flexible ZrO2 memory device performs good endurance of 778 times and long retention time over 105 s, which is possibly used in next-generation portable and flexible electronic equipment.
Keywords :
flexible electronics; random-access storage; thin film circuits; zirconium compounds; PES flexible substrate; ZrO2; flexible electronic equipment; nonvolatile memory; portable electronic equipment; resistive switching memory; thin film; Electrodes; Flexible electronics; Next generation networking; Nonvolatile memory; Substrates; Switches; Switching circuits; conductive filament; flexible electronics; resistive switching; retention;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482800
