A high-precision ultra-low-power hysteretic voltage detector for energy harvesting system

Author

Wenxiao Gu ; Xiaobo Wu ; Menglian Zhao ; Qing Liu

Author_Institution

Inst. of VLSI design, Zhejiang Univ., Hangzhou, China

fYear

2012

Firstpage

1

Lastpage

2

Abstract

A high-precision ultra-low-power, hysteretic voltage detector (HVD) featuring temperature and process insensitivity is presented in this paper. In order to improve its thermal stability, a temperature-independent current is generated by a special voltage-controlled current source. The current is compared with a reference current to determine the start-up voltage of hysteresis window. And a Schmitt inverter is served to provide the hysteresis window. Besides, a current pre-amplifier is developed to enhance the HVD´s response to small changes of the detected voltage. The HVD is designed and fabricated in SMIC 0.18 μm CMOS process. The simulation results show that its hysteresis window is about 0.02V. And the sensitivity to temperature and process corners are about 347ppm/°C and -1.5%~2.3% respectively. In addition, the HVD can response precisely to as low as 1mV variation around the switching voltage. The total power consumption of this HVD is only 840nW at 1.8V supply voltage.

Keywords

CMOS integrated circuits; constant current sources; energy harvesting; hysteresis; invertors; preamplifiers; thermal stability; voltage control; CMOS process; HVD; SMIC; Schmitt inverter; current preamplifier; energy harvesting system; hysteresis window; hysteretic voltage detector; power 840 nW; power consumption; process insensitivity; size 0.18 mum; switching voltage; temperature insensitivity; thermal stability; voltage 1.8 V; voltage controlled current source; CMOS integrated circuits; Indexes; high-precision; hysteretic voltage detector (HVD); process insensitive; temperature independent; ultra-low-power;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482806

Filename

6482806