Title :
Nature of hot carrier damage in spacer oxide of LDD n-MOSFETs
Author :
Manhas, S.K. ; Sekhar, D. Chandra ; Oates, A.S. ; De Souza, M.M.
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
fDate :
6/24/1905 12:00:00 AM
Abstract :
The nature of hot carrier degradation of spacer oxide in LDD n-channel MOSFETs with stress time of the order of microseconds is investigated. It is seen that, under Vg~Vt and I submax stress conditions, the damage is caused by interface state generation. Under the Vg=Vd condition, the damage is attributed to two different interface generation mechanisms with some contribution from electron trapping
Keywords :
MOSFET; electron traps; hot carriers; interface states; semiconductor device testing; LDD n-MOSFETs; charge pumping measurements; electron trapping; hot carrier degradation; interface generation mechanisms; interface state generation; series resistance degradation; spacer oxide; stress conditions; CMOS technology; Degradation; Electrical resistance measurement; Electron traps; Hot carriers; Immune system; Interface states; MOSFET circuits; Stress; Voltage;
Conference_Titel :
Microelectronics, 2002. MIEL 2002. 23rd International Conference on
Conference_Location :
Nis
Print_ISBN :
0-7803-7235-2
DOI :
10.1109/MIEL.2002.1003362
