• DocumentCode
    1618505
  • Title

    A tunable integrated duplexer with 50dB isolation in 40nm CMOS

  • Author

    Mikhemar, M. ; Darabi, H. ; Abidi, A.

  • Author_Institution
    Broadcom, Irvine, CA
  • fYear
    2009
  • Firstpage
    386
  • Abstract
    Modern RF duplexers rely on frequency-selective filters for isolation. The stringent isolation requirements prohibit the integration of RF duplexers on silicon and particularly in CMOS technology. However, CMOS technology offers superior tuning and calibration capabilities supported by the integrated digital baseband. This work presents the first integrated duplexer in CMOS technology with an adequate performance for full-duplex cellular applications such as WCDMA and HSPA. The proposed implementation is based on electrical balance of a hybrid transformer rather than frequency selectivity which unfavorably requires high-Q elements.
  • Keywords
    CMOS digital integrated circuits; calibration; cellular radio; circuit tuning; elemental semiconductors; radiofrequency filters; silicon; CMOS technology; HSPA; RF duplexer; Si; WCDMA; calibration capability; electrical balance; frequency-selective filter; full-duplex cellular application; high-Q element; hybrid transformer; integrated digital baseband; size 40 nm; stringent isolation requirement; tunable integrated duplexer; Bandwidth; CMOS technology; Character generation; Frequency; Inductors; Multiaccess communication; Noise cancellation; Noise measurement; Resonance; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-3458-9
  • Type

    conf

  • DOI
    10.1109/ISSCC.2009.4977470
  • Filename
    4977470