DocumentCode
1618505
Title
A tunable integrated duplexer with 50dB isolation in 40nm CMOS
Author
Mikhemar, M. ; Darabi, H. ; Abidi, A.
Author_Institution
Broadcom, Irvine, CA
fYear
2009
Firstpage
386
Abstract
Modern RF duplexers rely on frequency-selective filters for isolation. The stringent isolation requirements prohibit the integration of RF duplexers on silicon and particularly in CMOS technology. However, CMOS technology offers superior tuning and calibration capabilities supported by the integrated digital baseband. This work presents the first integrated duplexer in CMOS technology with an adequate performance for full-duplex cellular applications such as WCDMA and HSPA. The proposed implementation is based on electrical balance of a hybrid transformer rather than frequency selectivity which unfavorably requires high-Q elements.
Keywords
CMOS digital integrated circuits; calibration; cellular radio; circuit tuning; elemental semiconductors; radiofrequency filters; silicon; CMOS technology; HSPA; RF duplexer; Si; WCDMA; calibration capability; electrical balance; frequency-selective filter; full-duplex cellular application; high-Q element; hybrid transformer; integrated digital baseband; size 40 nm; stringent isolation requirement; tunable integrated duplexer; Bandwidth; CMOS technology; Character generation; Frequency; Inductors; Multiaccess communication; Noise cancellation; Noise measurement; Resonance; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference - Digest of Technical Papers, 2009. ISSCC 2009. IEEE International
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-3458-9
Type
conf
DOI
10.1109/ISSCC.2009.4977470
Filename
4977470
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