Title :
Investigation of SOI SCR triggering and current sustaining under DC and TLP conditions
Author :
Junjun Li ; Di Sarro, James ; You Li ; Gauthier, R.
Author_Institution :
IBM Semicond. R&D Center, Essex Junction, VT, USA
Abstract :
We present DC and TLP data of four-terminal SCR devices and a diode-triggered SCR from an advanced SOI CMOS technology. Data analysis concludes that the triggering of an actively triggered SCR is related only to the current gain of each individual bipolar transistor, not the current gain product. Successful current sustaining of the SCR depends on the base resistance of its passively triggered bipolar transistor.
Keywords :
CMOS integrated circuits; bipolar transistors; semiconductor diodes; silicon-on-insulator; thyristors; CMOS; DC; SOI; TLP; diode-triggered SCR; passively triggered bipolar transistor; silicon controlled rectifiers; silicon-on-insulator; Anodes; Cathodes; Current measurement; Electrostatic discharges; Junctions; Resistance; Thyristors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
