• DocumentCode
    1618934
  • Title

    ESD performance of high mobility SiGe quantum well bulk finFET diodes and PMOS devices

  • Author

    Linten, D. ; Hellings, Geert ; Chen, Shih-Hung ; Zografos, Odysseas ; Scholz, Matthias ; Veloso, A. ; Groeseneken, Guido

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    Using a SiGe quantum well (QW) high mobility channel is an option for advanced PMOS Bulk finFET devices. This work presents the impact on the ESD robustness of gated nwell diodes and PMOS devices by moving from Si channels to SiGe QW channels, and by changing the device architecture from planar to bulk FinFET.
  • Keywords
    Ge-Si alloys; MOSFET; electrostatic discharge; semiconductor diodes; semiconductor quantum wells; ESD performance; ESD robustness; PMOS bulk finFET devices; PMOS devices; SiGe; device architecture; gated nwell diodes; high mobility silicon germanium quantum well bulk finFET diodes; quantum well high mobility channel; silicon channels; Anodes; Electrostatic discharges; FinFETs; Layout; Logic gates; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6635900
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1618934