Title :
Current leakage and parasitic capacitance in transient second and triple order Cockcroft-Walton voltage multiplier
Author :
Di Cataldo, G. ; Palumbo, G.
Author_Institution :
Dipartimento Elettrico, Catania Univ., Italy
Abstract :
Theoretical models of the double and triple Cockroft-Walton voltage multiplier in the transient region are reported. The circuits discussed are commonly used in power ICs to allow the switching-on of an MOS device. The models take parasitic capacitance and current leakage into account
Keywords :
MOS integrated circuits; multiplying circuits; power integrated circuits; voltage multipliers; MOS device; current leakage; double order multiplier; parasitic capacitance; power ICs; transient region; triple order Cockcroft-Walton voltage multiplier; Capacitors; Charge pumps; Circuits; Diodes; Equations; Parasitic capacitance; Power supplies; Voltage;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271222
