Enhanced UV-visible rejection ratio in an MSM UV photodetector fabricated on N-face GaN by thermal annealing effects

Author

Chang-Ju Lee ; Young-Jin Kwon ; Hyun-Gu Cha ; Sung-Ho Hahm

Author_Institution

Grad. Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2012

Firstpage

1

Lastpage

2

Abstract

We investigated a thermal annealing effect on N-face GaN with electrical and optical characteristics. We used Al Schottky electrodes for the formation of Al-N bonding. The dark current level increased after an annealing at low temperatures below 673 K while it decreased after annealing at 773 K. It was found that the AlN barrier was formed by thermal annealing at 773 K. In the spectral photo-responsivity characteristics, the maximum responsivity decreased and UV/visible rejection ratio was significantly improved with annealing at 773 K.

Keywords

III-V semiconductors; Schottky barriers; aluminium; annealing; bonding processes; gallium compounds; photodetectors; ultraviolet detectors; wide band gap semiconductors; Al-GaN; MSM UV photodetector; N-face gallium nitride; Schottky electrodes; dark current level; electrical characteristics; enhanced UV-visible rejection ratio; optical characteristics; spectral photoresponsivity characteristics; temperature 773 K; thermal annealing effects; Annealing; Dark current; Detectors; Gallium nitride; Light emitting diodes; Metals; Substrates; GaN; N-face; Photodetector; Thermal Annealing; UV;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482830

Filename

6482830