Title :
A 1.8V wide-band LNA design in 0.18-µm triple-well CMOS
Author :
Hyeonseok Hwang ; Chan-Hui Jeong ; Chankeun Kwon ; Hoonki Kim ; Youngmok Jeong ; Bumsoo Lee ; Soo-won Kim
Author_Institution :
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
Abstract :
In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.
Keywords :
CMOS analogue integrated circuits; digital video broadcasting; low noise amplifiers; wideband amplifiers; DVB-S2; LNA circuit; body connection; cascode type CMOS low noise amplifiers; size 0.18 mum; threshold voltage; triple-well CMOS; triple-well structure; voltage 1.8 V; wide-band LNA design; Bandwidth; CMOS integrated circuits; Digital video broadcasting; Gain; MOS devices; Receivers; Threshold voltage; CMOS; Deep N-well; LNA; Triple-well;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482831
