DocumentCode
1619011
Title
A 1.8V wide-band LNA design in 0.18-µm triple-well CMOS
Author
Hyeonseok Hwang ; Chan-Hui Jeong ; Chankeun Kwon ; Hoonki Kim ; Youngmok Jeong ; Bumsoo Lee ; Soo-won Kim
Author_Institution
Dept. of Electr. Eng., Korea Univ., Seoul, South Korea
fYear
2012
Firstpage
1
Lastpage
2
Abstract
In this paper, comparison between cascode type CMOS low noise amplifiers (LNAs) at different body connection in triple-well structure are presented. By employing a body to source direct connection, the LNA circuit can be designed more compact while maintaining an enhanced gain and bandwidth due to suppression of variation in the threshold voltage. LNAs for DVB-S2 have been designed and fabricated using 0.18-μm triple-well CMOS technology.
Keywords
CMOS analogue integrated circuits; digital video broadcasting; low noise amplifiers; wideband amplifiers; DVB-S2; LNA circuit; body connection; cascode type CMOS low noise amplifiers; size 0.18 mum; threshold voltage; triple-well CMOS; triple-well structure; voltage 1.8 V; wide-band LNA design; Bandwidth; CMOS integrated circuits; Digital video broadcasting; Gain; MOS devices; Receivers; Threshold voltage; CMOS; Deep N-well; LNA; Triple-well;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location
Bangkok
Print_ISBN
978-1-4673-5694-7
Type
conf
DOI
10.1109/EDSSC.2012.6482831
Filename
6482831
Link To Document