DocumentCode :
1619230
Title :
Power-to-failure investigation for PNP-based ESD protections: From ns to ms
Author :
Cerati, Lorenzo ; Di Biccari, Leonardo ; Andreini, Antonio ; Castiglione, Corrado ; Blanc, Daisy
Author_Institution :
STMicroelectron., Agrate Brianza, Italy
fYear :
2013
Firstpage :
1
Lastpage :
10
Abstract :
Power-to-Failure of PNP transistors used as ESD protection devices is analysed in this work both at experimental and simulation level. A complete analysis from ns to ms range is provided to evaluate the overall robustness of this solution not only for ESD events but also for EOS-like stresses.
Keywords :
electrostatic discharge; transistors; EOS; ESD protection devices; PNP transistors; power-to-failure investigation; Computer architecture; Data models; Electrostatic discharges; Performance evaluation; Robustness; Stress; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
ISSN :
0739-5159
Type :
conf
Filename :
6635913
Link To Document :
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