Title :
Design of driving transistor in a-Si:H TFT gate driver circuit
Author :
Can Zheng ; Congwei Liao ; Jianhua Li ; Shengdong Zhang
Author_Institution :
Key Lab. for TFT & Adv. Display, Peking Univ., Shenzhen, China
Abstract :
The driving transistor in a-Si:H gate driver circuits is studied systematically for the first time. A viable device layout for the driving device is proposed and investigated. The dependence of the circuit performance on the driving device dimension is analyzed in detail.
Keywords :
driver circuits; hydrogen; silicon; thin film transistors; Si:H; TFT gate driver circuit; driving transistor design; viable device layout; Clocks; Driver circuits; Layout; Logic gates; Power demand; Thin film transistors; a-Si:H TFT; driving transistor; gate driver circuit; parasitic capacitance;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482840
