• DocumentCode
    1619402
  • Title

    Novel nonlinear interpolation for Si1−xGex bandstructure parameters

  • Author

    Sant, Saurabh ; Lodha, Saurabh ; Ganguly, Utsav ; Ganguly, Shaumik

  • Author_Institution
    Dept. of Electr. Eng., IIT Bombay, Mumbai, India
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Novel nonlinear interpolation methods for accurately calculating the band-energies and band-offsets of silicon-germanium alloys and the results thereof are presented herein.
  • Keywords
    Ge-Si alloys; conduction bands; energy gap; interpolation; semiconductor materials; valence bands; Si1-xGex; band energy; band offset; band structure parameters; conduction bands; nonlinear interpolation methods; silicon-germanium alloys; valence bands; Effective mass; Interpolation; Metals; Photonic band gap; Silicon; Silicon germanium; Substrates; alloy; band-offset; bandgap; silicon-germanium; strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
  • Conference_Location
    Bangkok
  • Print_ISBN
    978-1-4673-5694-7
  • Type

    conf

  • DOI
    10.1109/EDSSC.2012.6482846
  • Filename
    6482846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1619402