Title :
Development of a GaAs HBT integrated circuit chip performance simulator
Author_Institution :
Dept. of Electr. Eng., Michigan Technol. Univ., Houghton, MI, USA
Abstract :
For an integrated circuit chip based on GaAs heterojunction bipolar transistor (HBT) technology, a computer simulator called GCHIPSIM has been developed for chip performance indicators including maximum clock frequency, power consumption, fabrication yield and size. GCHIPSIM is used to study the dependence of the indicators on technology feature size and chip integration level
Keywords :
III-V semiconductors; bipolar integrated circuits; circuit analysis computing; digital simulation; gallium arsenide; heterojunction bipolar transistors; GCHIPSIM; GaAs; HBT integrated circuit chip; computer simulator; heterojunction bipolar transistor; monolithic IC; performance simulator; Bipolar integrated circuits; Circuit simulation; Clocks; Computational modeling; Computer simulation; Energy consumption; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology;
Conference_Titel :
Circuits and Systems, 1992., Proceedings of the 35th Midwest Symposium on
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-0510-8
DOI :
10.1109/MWSCAS.1992.271242
