Dual-band responsivity of AlGaN/GaN MSM UV photodiode

Author

Young-Jin Kwon ; Chang-Ju Lee ; Do-Kywn Kim ; Sung-Ho Hahm

Author_Institution

Sch. of Electr. Eng. Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2012

Firstpage

1

Lastpage

2

Abstract

We proposed a AlGaN/GaN Schottky MSM diode for double-window UV sensing and realized it using three metals. They showed a significantly different value of currents between 300 nm and other wavelengths in both Fowler-Nordheim and Poole-Frenkel plots at the low voltage region, which is attributed to the direct electron conduction to the anode, and/or hole conduction to the cathode from the AlGaN region. Since the ln(I/V) levels is high for the shorter wavelength and low for the longer UV, we may apply to detect the dual windows of UV.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; anodes; cathodes; gallium compounds; photodiodes; wide band gap semiconductors; AlGaN-GaN; Fowler-Nordheim plot; MSM UV photodiode; Poole-Frenkel plot; Schottky MSM diode; anode; cathode; direct electron conduction; double-window UV sensing; dual-band responsivity; hole conduction; Aluminum gallium nitride; Electrodes; Gallium nitride; Lighting; Nickel; Photodiodes; AlGaN/GaN; MSM; dual-band UV sensing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4673-5694-7

Type

conf

DOI

10.1109/EDSSC.2012.6482847

Filename

6482847