Title :
Simulation of low voltage RF MEMS switch for reconfigurable antennas
Author :
Rana, S.M. ; Ashraf, Muhammad Waseem ; Afzulpurlkar, N. ; Tayyaba, S. ; Punyasai, Chumnarn
Author_Institution :
Sch. of Eng. & Technol., Asian Inst. of Technol. (AIT), Bangkok, Thailand
Abstract :
Radio frequency (RF) microelectromechanical (MEMS) switches and filters are extensively used for telecommunication in the last few years due to their high performance compared to the other microelectronics switches available in present electronic world. Considering the cost effectiveness and high performance, conventional switches are replaced by RF MEMS switch in mobile communication technology. In order to open circuit in transmission line or simply to get a short circuit, RF MEMS uses mechanical movement and it has immense privileges of low-insertion loss, good linearity and high isolation. To achieve low voltage, switching frequency and low insertion loss, a RF MEMS switch is designed in this study using ANSYS. Beam with meander have been model for structural and pull in analysis. For pull in analysis 2.5 V to 6 V has been applied. The best suitable deflection 2.8536 μm has been achieved at the 5 V applied pull in voltage with maximum equivalent stress 4.5278 MPa.
Keywords :
microswitches; mobile radio; radiofrequency filters; ANSYS; RF MEMS filters; beam with meander; electronic world; low voltage RF MEMS switch; low-insertion loss; maximum equivalent stress; mechanical movement; microelectronics switches; mobile communication technology; open circuit; pressure 4.5278 MPa; radio frequency microelectromechanical switches; reconfigurable antennas; switching frequency; transmission line; voltage 2.5 V to 6 V; Fabrication; Finite element analysis; Micromechanical devices; Microswitches; Radio frequency; Resonant frequency; Stress; Beam; MEMS; Radio frequencyt; Switch;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482852