• DocumentCode
    161958
  • Title

    13.56 MHz class E power amplifier with 94.6% efficiency and 31 watts output power for RF heating applications

  • Author

    Srimuang, Pattrawut ; Puangngernmak, Nutdechatorn ; Chalermwisutkul, Suramate

  • Author_Institution
    Civil Aviation Training Center, Bangkok, Thailand
  • fYear
    2014
  • fDate
    14-17 May 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Radio frequency power amplifiers (RF PA) are widely used for several applications e.g. wireless communication, wireless power transmission (WPT) and radio frequency heating. In general, the choice of power amplifier´s operating class is based on requirements regarding linearity and power efficiency. For applications in which linearity is not a critical issue whereas high efficiency is desired, switched-mode amplifier e.g. class E is suitable. Switched-mode operation of class E offers high efficiency with a simple topology, leading to optimal costs of production and system operation. This work presents design and implementation of a high power and high efficiency 13.56 MHz class E power amplifier with parallel load circuit. As a power device, LDMOS was chosen. The fabricated class E PA provides Power-Added Efficiency (PAE) of 94.6% with 21.92 power gain when maximum output power of 44.92 dBm (31 W) is delivered to the load. Industrial, Scientific and medical (ISM) bands Class E PA with parallel load circuit.
  • Keywords
    HF amplifiers; radiofrequency heating; radiofrequency power amplifiers; LDMOS; PAE; RF PA; RF heating applications; WPT; class E power amplifier; efficiency 94.6 percent; frequency 13.56 MHz; industrial scientific and medical band class E PA; parallel load circuit; power 31 W; power device; power efficiency; power-added efficiency; radiofrequency heating; radiofrequency power amplifiers; switched-mode amplifier; wireless communication; wireless power transmission; Impedance; Inductors; Logic gates; Power amplifiers; Power generation; Radio frequency; Voltage measurement; Class E; ISM band; Laterally Diffused Metal Oxide Semiconductor (LDMOS); Power amplifier; Power-Added Efficiency (PAE);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON), 2014 11th International Conference on
  • Conference_Location
    Nakhon Ratchasima
  • Type

    conf

  • DOI
    10.1109/ECTICon.2014.6839809
  • Filename
    6839809