DocumentCode
1619615
Title
High-voltage asymmetrical bi-directional device for system-level ESD protection of automotive applications on a BiCMOS technology
Author
Zhan, Chuanhan ; Gill, Christopher ; Changsoo Hong ; Kaneshiro, Mike
Author_Institution
Freescale Semicond., Tempe, AZ, USA
fYear
2013
Firstpage
1
Lastpage
8
Abstract
A novel high-voltage hi-directional ESD protection device for automotive applications was developed on a 0.18um BiCMOS technology. This device used an asymmetrical scheme optimized as an area-efficient solution for system-level compliance. TLP measurements showed device´s excellent It2 of 120mA/um. It also demonstrated 11KV IEC 61000-4-2 contact robustness without external suppressors.
Keywords
BiCMOS integrated circuits; automotive electrics; automotive electronics; electrostatic discharge; BiCMOS technology; automotive applications; high voltage asymmetrical bidirectional device; high voltage bidirectional ESD protection device; system level ESD protection; system level compliance; Bidirectional control; Clamps; Electrostatic discharges; IEC; Junctions; Robustness; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location
Las Vegas, NV
ISSN
0739-5159
Type
conf
Filename
6635929
Link To Document