Title :
Theoretical calculation and efficient simulations of power semiconductor AlGaN/GaN HEMTs
Author :
Huolin Huang ; Liang, Yung C. ; Samudra, Ganesh S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore, Singapore
Abstract :
In this paper, the influences of Al mole fraction and AlGaN layer strain relaxation on the bound polarization charges and the 2DEG concentration are investigated by theoretical calculation. The calculated sheet polarization charge data is used to preset Sentaurus TCAD to simulate the performance characteristics of the GaN HEMT device. The proposed method is proven to be a simple, equally accurate and effective approach in the simulations. For simplicity and time-saving, the theory-based hybrid method can be employed extensively in the simulations of GaN heterostructures power devices.
Keywords :
III-V semiconductors; aluminium compounds; electronic engineering computing; gallium compounds; power HEMT; semiconductor device models; technology CAD (electronics); wide band gap semiconductors; 2DEG concentration; AlGaN-GaN; Sentaurus TCAD simulation; bound polarization charge; mole fraction; power semiconductor HEMT simulation; sheet polarization charge data calculation; strain relaxation; theoretical calculation; theory-based hybrid method;
Conference_Titel :
Electron Devices and Solid State Circuit (EDSSC), 2012 IEEE International Conference on
Conference_Location :
Bangkok
Print_ISBN :
978-1-4673-5694-7
DOI :
10.1109/EDSSC.2012.6482860
