Title :
Photon accelerated turn-on of high-voltage ESD diode breakdown
Author :
Willemen, Joost ; Yiqun Cao ; Lebon, Julien ; Mayerhofer, Michael ; Glaser, Ulrich
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
The avalanche breakdown delay in HV ESD diodes poses a serious threat to their protection effectiveness especially under voltage pre-bias. A novel device solution significantly shortens the turn-on behavior by utilizing near-by emitted photons from an auxiliary structure. The physical background is addressed and measurements demonstrate the effectiveness of the measures.
Keywords :
avalanche breakdown; electrostatic discharge; high-voltage engineering; power semiconductor diodes; semiconductor device breakdown; HV ESD diodes; auxiliary structure; avalanche breakdown delay; device solution; high-voltage ESD diode breakdown; near-by emitted photon utilization; photon accelerated turn-on; protection effectiveness; voltage pre-bias; Absorption; Delays; Electrostatic discharges; Junctions; Photonics; Silicon;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
