Title :
Characterization of IGCT under zero-current-transition condition
Author :
Motto, Kevin ; Zhang, Bin ; Huang, Alex Q.
Author_Institution :
Dept. of Power/Control Syst., Northrop Grumman Corp., Sykesville, MD, USA
Abstract :
This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also alleviate the reverse recovery stress of the diode. The ZCT circuit is therefore suitable for increasing the current handling capabilities of IGCT devices.
Keywords :
power semiconductor switches; semiconductor device measurement; semiconductor device testing; switching; thyristors; IGCT characterization; current handling capabilities; diode reverse recovery stress; integrated gate commutated thyristor; soft switching; turn-off loss; turn-on loss; zero-current-transition condition; Circuit testing; Fault currents; Inverters; RLC circuits; Resonance; Stress; Switches; Switching circuits; Thyristors; Zero voltage switching;
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-7114-3
DOI :
10.1109/IAS.2001.955732
