Title :
Accelerated current test for fast tunnel oxide evaluation [of EPROMs]
Author :
Cappelletti, P. ; Ghezzi, P. ; Pio, F. ; Riva, C.
Author_Institution :
SGS-Thomson, Brianza, Italy
Abstract :
An accelerated method for wafer-level tunnel oxide evaluation and screening is proposed and compared to the widely used constant current test. The dielectric is stressed by an exponentially increasing current flow until breakdown occurs. In a short measurement time a wide current density range is explored, so that both latent defectivity and intrinsic oxide properties can be monitored. It is concluded that sensitivity in charge to breakdown determination and its good correlation with constant current stress results make the ramped current method suitable for routine use in both R&D and production
Keywords :
EPROM; electric breakdown of solids; integrated circuit testing; integrated memory circuits; life testing; accelerated method; breakdown; constant current stress; current density range; exponentially increasing current flow; fast tunnel oxide evaluation; intrinsic oxide properties; latent defectivity; ramped current method; screening; wafer-level tunnel oxide; Current density; Current measurement; Density measurement; Dielectric breakdown; Dielectric measurements; Electric breakdown; Life estimation; Monitoring; Testing; Time measurement;
Conference_Titel :
Microelectronic Test Structures, 1991. ICMTS 1991. Proceedings of the 1991 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-87942-588-1
DOI :
10.1109/ICMTS.1990.161717
