Title :
A 1.1 V bootstrapped bipolar CMOS logic (B2CMOS) for low power systems
Author :
Embabi, S.H.K. ; Bellaouar, A. ; Islam, Kazi
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper reports on a BiCMOS logic gate which is capable of operating down to 1.1 V and can, hence, be used for low power systems. The proposed B2CMOS uses a non-complementary BiCMOS process. Simulations have shown that the B2CMOS gate outperforms CMOS and BiNMOS gates at 3 V and below. The cross-over capacitance/fanout of the B2CMOS gate is 100 fF (i.e. fanout of 4) at 1.5 V. The delay-to-load sensitivity of the B2CMOS is 220 ps/pF (8 ps/fanout) which is one order of magnitude smaller than that of CMOS at 1.5 V
Keywords :
BiCMOS logic circuits; 1.1 V; 100 fF; B2CMOS; BiCMOS logic gate; bootstrapped bipolar CMOS logic; cross-over capacitance/fanout; delay-to-load sensitivity; low power systems; noncomplementary process; simulation; BiCMOS integrated circuits; CMOS logic circuits; Capacitance; Complexity theory; Hemorrhaging; Inverters; MOS devices; Magnetic flux leakage; Power systems; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587850
