Title :
ESD protection circuit for a sub-1dB noise figure LNA in a SiGe:C BiCMOS technology
Author :
Abessolo-Bidzo, Dolphin ; Krosschell, Rob ; Simin, Alexander ; Smedes, T.
Author_Institution :
NXP Semicond., Nijmegen, Netherlands
Abstract :
This paper presents the ESD protection strategy designed for a fully integrated base station LNA with a sub-1dB noise figure, +35dB gain, large output swing and a high linearity. With a novel ESD protection circuit, implemented on RF input and output pins, the circuit achieved 2.5kV HBM and 750V CDM.
Keywords :
BiCMOS integrated circuits; electrostatic discharge; low noise amplifiers; BiCMOS technology; ESD protection circuit; LNA; SiGe:C; integrated base station; voltage 750 V; BiCMOS integrated circuits; Clamps; Diffusion tensor imaging; Electrostatic discharges; Gain; Noise figure; Radio frequency;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
