• DocumentCode
    1619875
  • Title

    ESD protection circuit for a sub-1dB noise figure LNA in a SiGe:C BiCMOS technology

  • Author

    Abessolo-Bidzo, Dolphin ; Krosschell, Rob ; Simin, Alexander ; Smedes, T.

  • Author_Institution
    NXP Semicond., Nijmegen, Netherlands
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    This paper presents the ESD protection strategy designed for a fully integrated base station LNA with a sub-1dB noise figure, +35dB gain, large output swing and a high linearity. With a novel ESD protection circuit, implemented on RF input and output pins, the circuit achieved 2.5kV HBM and 750V CDM.
  • Keywords
    BiCMOS integrated circuits; electrostatic discharge; low noise amplifiers; BiCMOS technology; ESD protection circuit; LNA; SiGe:C; integrated base station; voltage 750 V; BiCMOS integrated circuits; Clamps; Diffusion tensor imaging; Electrostatic discharges; Gain; Noise figure; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6635936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1619875