Title :
Multi-cell circuit model for high-power thyristor-type semiconductor devices
Author :
Schröder, Stefan ; Detjen, Dirk ; De Doncker, Rik W.
Author_Institution :
Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
Abstract :
New device models for circuit simulation are developed for high-power thyristor-type devices, such as GTO, IGCT and MTO. These models are based on semiconductor physics, which guarantees a wide range of validity. In particular, the proposed models are based on the lumped charge approach. Coupled electrical and thermal behavior is implemented to allow transient thermal simulations. To account for the nonuniform current distribution during turn-off several of these single-cell models are connected in parallel to simulate a complete device. Simulation results are compared with measurements.
Keywords :
circuit simulation; current distribution; power semiconductor switches; semiconductor device models; thermal analysis; thyristors; GTO; IGCT; MTO; circuit simulation; coupled electrical-thermal behavior; high-power thyristor-type semiconductor devices; lumped charge modelling approach; multi-cell circuit model; nonuniform current distribution; semiconductor physics; transient thermal simulations; Charge carrier processes; Charge carriers; Circuit simulation; Coupling circuits; Current distribution; Equations; Physics; Power electronics; Semiconductor devices; Thyristors;
Conference_Titel :
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE
Conference_Location :
Chicago, IL, USA
Print_ISBN :
0-7803-7114-3
DOI :
10.1109/IAS.2001.955736
