Title :
CDM single power domain failures in 90nm
Author :
Alvarez, Daniel ; Kupfer, Claudia ; Kruppa, J. ; Trivedi, Nitesh J. ; Chakravarthy, Sreesha N.
Author_Institution :
Infineon Technol., Neubiberg, Germany
Abstract :
In this paper two new types of single domain CDM failures in a 90nm flash CMOS-technology are reported where sender and receiver of the failed devices are located in the same power domain. The aspects that make these intra-domain signals susceptible to CDM failure are discussed and an automated method for detection of critical constructions is presented as well as proven circuit improvement.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; CDM single power domain failures; charged device model; electrostatic discharge; flash CMOS technology; intradomain signals; size 90 nm; Electrostatic discharges; Inverters; Logic gates; Metals; Receivers; Resistance; Routing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
Conference_Location :
Las Vegas, NV
