• DocumentCode
    1619946
  • Title

    CDM single power domain failures in 90nm

  • Author

    Alvarez, Daniel ; Kupfer, Claudia ; Kruppa, J. ; Trivedi, Nitesh J. ; Chakravarthy, Sreesha N.

  • Author_Institution
    Infineon Technol., Neubiberg, Germany
  • fYear
    2013
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    In this paper two new types of single domain CDM failures in a 90nm flash CMOS-technology are reported where sender and receiver of the failed devices are located in the same power domain. The aspects that make these intra-domain signals susceptible to CDM failure are discussed and an automated method for detection of critical constructions is presented as well as proven circuit improvement.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; integrated circuit modelling; integrated circuit reliability; CDM single power domain failures; charged device model; electrostatic discharge; flash CMOS technology; intradomain signals; size 90 nm; Electrostatic discharges; Inverters; Logic gates; Metals; Receivers; Resistance; Routing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2013 35th
  • Conference_Location
    Las Vegas, NV
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6635939
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1619946