DocumentCode
1620004
Title
The analysis of silicon bipolar transistor scaling-down scheme for low noise and low power analog application
Author
Itoh, Nobuyuki ; Yoshida, Yoshihiro ; Watanabe, Shuji ; Katsumata, Yasuhiro ; Iwai, Hisato
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1994
Firstpage
60
Lastpage
63
Abstract
A scheme for scaling-down of the silicon analog bipolar transistors has been investigated in detail in terms of power consumption, noise figure and associated power gain. There is an appropriate scaling approach for the analog bipolars
Keywords
bipolar transistors; 0.1 to 0.4 mum; 2 GHz; BiCMOS ICs; SPICE simulation; Si; low noise low power applications; noise figure; power consumption; power gain; scaling-down; silicon analog bipolar transistor; Admittance; BiCMOS integrated circuits; Bipolar transistors; Degradation; Energy consumption; Integrated circuit noise; Noise figure; Noise measurement; SPICE; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-1316-X
Type
conf
DOI
10.1109/BIPOL.1994.587856
Filename
587856
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