• DocumentCode
    1620004
  • Title

    The analysis of silicon bipolar transistor scaling-down scheme for low noise and low power analog application

  • Author

    Itoh, Nobuyuki ; Yoshida, Yoshihiro ; Watanabe, Shuji ; Katsumata, Yasuhiro ; Iwai, Hisato

  • Author_Institution
    Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
  • fYear
    1994
  • Firstpage
    60
  • Lastpage
    63
  • Abstract
    A scheme for scaling-down of the silicon analog bipolar transistors has been investigated in detail in terms of power consumption, noise figure and associated power gain. There is an appropriate scaling approach for the analog bipolars
  • Keywords
    bipolar transistors; 0.1 to 0.4 mum; 2 GHz; BiCMOS ICs; SPICE simulation; Si; low noise low power applications; noise figure; power consumption; power gain; scaling-down; silicon analog bipolar transistor; Admittance; BiCMOS integrated circuits; Bipolar transistors; Degradation; Energy consumption; Integrated circuit noise; Noise figure; Noise measurement; SPICE; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-1316-X
  • Type

    conf

  • DOI
    10.1109/BIPOL.1994.587856
  • Filename
    587856