Title :
Single crystal silicon contacted double self-aligned bipolar junction transistor by selective epitaxial growth
Author :
Subramanian, Chitra K. ; Neudeck, Gerold W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A novel single crystal silicon contacted double self-aligned transistor (DST) structure, that uses vertical seed epitaxial lateral overgrowth (VELO) is demonstrated. When scaled to smaller dimensions, this structure can provide an 18% improvement in ECL circuit speed
Keywords :
bipolar transistors; CVD epitaxial growth; ECL circuit speed; Si; double self-aligned bipolar junction transistor; selective epitaxial growth; vertical seed epitaxial lateral overgrowth; Circuits; Contacts; Crystallization; Epitaxial growth; Fabrication; Laboratories; Parasitic capacitance; Research and development; Silicon; Transistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting,1994., Proceedings of the 1994
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-1316-X
DOI :
10.1109/BIPOL.1994.587861
